Will silicon be the photonic material of the third millenium?PAVESI, L.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 26, pp R1169-R1196, issn 0953-8984Article

First principle calcuations of hydrogen in aluminium arsenidePAVESI, L.Solid state communications. 1992, Vol 83, Num 5, pp 317-322, issn 0038-1098Article

Monte Carlo simulations of the recombination dynamics in porous siliconROMAN, H. E; PAVESI, L.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 28, pp 5161-5187, issn 0953-8984Article

About the I-V characteristic of metal-porous silicon diodesGIEBEL, G; PAVESI, L.Physica status solidi. A. Applied research. 1995, Vol 151, Num 2, pp 355-361, issn 0031-8965Article

H passivation of Si impurities in GaAsPAVESI, L; GIANNOZZI, P.Physical review. B, Condensed matter. 1991, Vol 43, Num 3, pp 2446-2449, issn 0163-1829, 4 p.Article

L'USO DEL CCNU NELLA CHEMIOTERAPIA DEI TUMORI DEL SISTEMA NERVOSO CENTRALE = L'EMPLOI DE CCNU DANS LA CHIMIOTHERAPIE DES TUMEURS DU SYSTEME NERVEUX CENTRALADINOLFI D; PAVESI L; ROBUSTELLI DELLA CUNA G et al.1977; RIV. PATOL. NERV. MENTALE; ITA; DA. 1977 PUBL. 1978; VOL. 98; NO 3; PP. 191-195; ABS. ENG; BIBL. 10 REF.Article

Random porous silicon multilayers : application to distributed Bragg reflectors and interferential Fabry-Pérot filtersPAVESI, L; DUBOS, P.Semiconductor science and technology. 1997, Vol 12, Num 5, pp 570-575, issn 0268-1242Article

Periodic and purposely disordered superlattices : the effect of continuous and discrete disorder distributionPAVESI, L; REINHART, F. K.Physical review. B, Condensed matter. 1990, Vol 42, Num 17, pp 11362-11365, issn 0163-1829, 4 p.Article

ACUTE NON-LYMPHOBLASTIC LEUKEMIAROBUSTELLI DELLA CUNA G; CUZZONI Q; PAVESI L et al.1978; EUROP. J. CANCER; GBR; DA. 1978; VOL. 14; NO 10; PP. 1157-1158; BIBL. 14 REF.Article

CONTRIBUTO SPERIMENTALE ALLO STUDIO DELL' EFFETTO ANTICELLULARE DEL DIFENILMERCURIO. = CONTRIBUTION EXPERIMENTALE A L'ETUDE DE L'EFFET ANTICELLULAIRE DU DIPHENYLMERCURESINIBALDI V; POGGI G; PAVESI L et al.1975; LAV. UM.; ITAL.; DA. 1975; VOL. 27; NO 5; PP. 139-147; H.T. 1; ABS. ANGL.; BIBL. 21 REF.Article

Porous silicon : a route towards a Si-based photonics ?PAVESI, L.Microelectronics journal. 1996, Vol 27, Num 4-5, pp 437-448, issn 0959-8324Article

Stretched-exponential decay of the luminescence in porous siliconPAVESI, L; CESCHINI, M.Physical review. B, Condensed matter. 1993, Vol 48, Num 23, pp 17625-17628, issn 0163-1829Article

Atomic and molecular hydrogen in gallium arsenide : a theoretical studyPAVESI, L; GIANNOZZI, P.Physical review. B, Condensed matter. 1992, Vol 46, Num 8, pp 4621-4629, issn 0163-1829Article

Disorder-induced localization in superlatticesTUNCEL, E; PAVESI, L.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1992, Vol 65, Num 2, pp 213-229, issn 0958-6644Conference Paper

ANTIINFLAMMATORY ACTIVITY AND BIOAVAILABILITY OF PERCUTANEOUS PIROXICAMSCHIANTARELLI P; CADEL S; ACERBI D et al.1982; ARZNEIM.-FORSCH.; ISSN 0004-4172; DEU; DA. 1982; VOL. 32; NO 3; PP. 230-235; ABS. GER; BIBL. 20 REF.Article

Silicon nanocrystal light emitting device as a bidirectional optical transceiverMARCONI, A; ANOPCHENKO, A; PUCKER, G et al.Semiconductor science and technology. 2011, Vol 26, Num 9, issn 0268-1242, 095019.1-095019.3Article

Purcell factor and superradiance in Si-patterned waveguidesPITANTI, A; BETTOTTI, P; SARCHI, D et al.Optics letters. 2010, Vol 35, Num 20, pp 3384-3386, issn 0146-9592, 3 p.Article

Luminescence from exciton-free carrier collisions in GaSeCAPOZZI, V; PAVESI, L; STAEHLI, J. L et al.Journal of luminescence. 1991, Vol 48-49, pp 111-115, issn 0022-2313, 5 p., p.1Conference Paper

On the excitonic Mott transition in the static screening approximationPAVESI, L; STAEHLI, J. L; CAPOZZI, V et al.Journal of physics. C. Solid state physics. 1988, Vol 21, Num 8, pp 1485-1495, issn 0022-3719Article

Spin-polarized calculations and hyperfine parameters for hydrogen or muonium in GaAsVAN DE WALLE, C. G; PAVESI, L.Physical review. B, Condensed matter. 1993, Vol 47, Num 8, pp 4256-4260, issn 0163-1829Article

Photoluminescence of porous siliconPAVESI, L; CESCHINI, M; ROSSI, F et al.Journal of luminescence. 1993, Vol 57, Num 1-6, pp 131-135, issn 0022-2313Article

Elaboration, characterization and aging effects of porous silicon microcavities formed on lightly p-type doped substratesMULLONI, V; MAZZOLENI, C; PAVESI, L et al.Semiconductor science and technology. 1999, Vol 14, Num 12, pp 1052-1059, issn 0268-1242Article

Porous silicon resonant cavity light emitting diodesPAVESI, L; GUARDINI, R; MAZZOLENI, C et al.Solid state communications. 1996, Vol 97, Num 12, pp 1051-1053, issn 0038-1098Article

A comparison of Si-doped (100), (111)A, (111)B and (311)B Al_xGa_1-xAs samples grown by molecular beam epitaxyPAVESI, L; HENINI, M; JOHNSTON, D et al.Semiconductor science and technology. 1995, Vol 10, Num 1, pp 49-55, issn 0268-1242Article

Exciton-carrier scattering in gallium selenideCAPOZZI, V; PAVESI, L; STAEHLI, J. L et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 11, pp 6340-6349, issn 0163-1829Article